Avalanche photodiodes

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InGaAs photodiode
InGaAs photodiode
G14858-0020AA

InGaAs APD that greatly reduces dark current This InGaAs APD (avalanche photodiode) greatly reduces dark current over existing products by the use of a new device structure and improved processing. The ...

silicon photodiode
silicon photodiode
S14124-20

High-sensitivity Si APD for detection of light with a wavelength of 266 nm The S14124-20 is an improved Si APD from the S8664 series for high sensitive detection of light with a wavelength of 266 nm used in semiconductor inspection and ...

InGaAs photodiode
InGaAs photodiode
G8931 series

The G8931-04 is an InGaAs APD that delivers a high-speed response of 2.5 Gbps required for trunk line optical fiber communications such as SONET (synchronous optical network), G-PON (gigabit-capable passive optical network) and GE-PON ...

avalanche photodiode
avalanche photodiode
XSJ-10-APD6-16X

Description This 25Gbps APD light detector chip is a GSG electrode structure, which is a high-speed avalanche light detector chip with positive light entry, and the photosensitive zone size is Φ16μm. The main features ...

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PHOGRAIN TECHNOLOGY(SHENZHEN) CO., LTD.
avalanche photodiode
avalanche photodiode
XSJ-10-APD6-16

Description The 25Gbps APD light detector chip is a GS electrode structure, for the front into the light of high-speed avalanche light detector chip, the photosensitive area size is Φ16um, the main characteristics ...

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PHOGRAIN TECHNOLOGY(SHENZHEN) CO., LTD.
InGaAs photodiode
InGaAs photodiode
XSJ-10-APD5-40

Description This 10Gbps avalanche photodiode chip (APD chip) is a kind of Ground-Signal-Ground (GSG) electrode structure, with top-illuminated active area size is Φ40μm. This product features is high ...

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PHOGRAIN TECHNOLOGY(SHENZHEN) CO., LTD.
avalanche photodiode
avalanche photodiode
XSJ10-APD4-55G

Description The Avalanche Photodiode Chip (APD Chip) is a light receiving chip with an internal multiplying photocurrent. The size of the photosensitive area of the product is Φ55um and the front light ...

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PHOGRAIN TECHNOLOGY(SHENZHEN) CO., LTD.
avalanche photodiode
avalanche photodiode
XSJ10-APD4-50T

Description Avalanche photodiode chip (APD chip) is a kind of active device that provides a built-in gain and amplifies the photocurrent. This product features is anode on top and cathode on back, ...

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PHOGRAIN TECHNOLOGY(SHENZHEN) CO., LTD.
avalanche photodiode
avalanche photodiode
XSJ-10-APD5-50P-X

Description This 10G avalanche photodiode chip (APD chip) is a kind of P electrode on top and N electrode in bottom structure, with top-illuminated active area size is Φ50μm. This product features ...

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PHOGRAIN TECHNOLOGY(SHENZHEN) CO., LTD.
InGaAs photodiode
InGaAs photodiode
XSJ-10-APD5-40S-X

Description The 10Gbps APD optical detector chip is GSG electrode structure, for the front into the light of high-speed avalanche light detector chip, the photosensitive area size is 40um, the main characteristics ...

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PHOGRAIN TECHNOLOGY(SHENZHEN) CO., LTD.
InGaAs photodiode
InGaAs photodiode
XSJ-10-APD4-50

Description Avalanche photodiode chip (APD chip) is a kind of active device that provides a built-in gain and amplifies the photocurrent. This product features is anode on top and cathode on back, ...

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PHOGRAIN TECHNOLOGY(SHENZHEN) CO., LTD.
InGaAs photodiode
InGaAs photodiode
XSJ-10-APD4-50T

Description Avalanche photodiode chip (APD chip) is a kind of active device that provides a built-in gain and amplifies the photocurrent. This product features is anode on top and cathode on back, ...

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PHOGRAIN TECHNOLOGY(SHENZHEN) CO., LTD.
InGaAs photodiode
InGaAs photodiode
XSJ-10-APD4-50G

Description Avalanche photodiode chip (APD chip) is a kind of active device that provides a built-in gain and amplifies the photocurrent. This product features is anode on top and cathode on back, ...

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PHOGRAIN TECHNOLOGY(SHENZHEN) CO., LTD.
avalanche photodiode
avalanche photodiode

PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs is fiber coupled packages, of proven manufacture and design. Our Germanium devices are suitable from 800 to 2100nm. All devices are available ...

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PD-LD
avalanche photodiode
avalanche photodiode

PD-LD Inc. offers 2 sizes of standard Silicon Avalanche Photodiodes (APDs) in several styles of fiber coupled packages. The semiconductors are available in two standard sizes: 230 micron or 500 micron ...

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PD-LD
avalanche photodiode
avalanche photodiode

he high-reliability Lumentum 1310/1550 nm 10G XFP ROSA receiver optical sub-assembly (ROSA) product, designed specifically for the XFP transceiver, provides excellent performance over extended operating temperatures in high-speed applications ...

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LUMENTUM
avalanche photodiode
avalanche photodiode

The Lumentum 2.5 Gbps front-illuminated avalanche photodiode (FI-APD) is designed for gigabit passive optical networks (GPON) that enable data transmissions for fiber-to-the-home (FTTH) offerings. As ...

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LUMENTUM
silicon photodiode
silicon photodiode

Silicon Avalanche Photodiodes Si-APD are suitable for the spectral range from 255 nm to 1100 nm. Wide range of APDs Since the foundation of Laser Components Detector Group Inc. in 2004 we have built ...

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LASER COMPONENTS
InGaAs photodiode
InGaAs photodiode
IAG Series

InGaAs avalanche photodiodes are used to detect light in the spectral range from 1100 nm to 1700 nm. They exhibit a significantly lower noise than germanium diodes. InGaAs APDs 1100 - 1700 nm These ...

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LASER COMPONENTS
avalanche photodiode
avalanche photodiode
H series

APD receivers have an integrated preamplifier and come in a compact, hermetically-sealed housing. APD Receivers APDs with matched, integrated pre-amplifier in compact hermetic packages. Our Receivers The performance of an APD ...

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LASER COMPONENTS
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