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Eris is a Taiwan based company, specialised in manufacturing rectifiers/ diodes. All of Eris’ products are employed the strict quality control by state-of-the-art equipments with very competitive prices, especially Schottky diodes. Our e-catalogue is on the link: http://tw.eris.com.tw/catalogue.pdf
If you need more information or favorable quotation, we welcome you to contact with Ms. Cindy Lin through her email add.: cindy.lin@eris.com.tw
We are looking forward to hearing from you soon!
Best Regards,
Eris Technology Corporation
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Renesas offers full lineup of high performance, small footprint diodes from Schottky, Zener to high frequency Variable Capacitance and PIN diodes. MP6 package (0603 compact exterior width of 0.3mm) is one of the world’s smallest packages, which accommodates PIN diode of extremely low capacitance with Renesas’s original trench structure.
For complete lineup of Renesas general-use and high frequency diodes, visit the URL below.
http://eu.renesas.com/fmwk.jsp?cnt=diode_landing.jsp&fp=/products/discrete/diodes/
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FEATURES:
• LOW COST
• HIGH RELIABILITY
• SMALLER CASE SIZE THAN COMPETITION
• SPECIAL SELECTIONS AVAILABLE
• SUPERIOR LOT TO LOT CONSISTENCY
• LEADED DEVICES AVAILABLE
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Features:
- Fast Switching Diode (Trr <4.0nsec)
- Flat Lead, Surface Mount Device under 0.70mm Height
- Extremely Small Outline Plastic Package SOD523F
- Moisture Level Sensitivity 1
- Pb-free Version and RoHS Compliant
- Matte Tin (Sn) Lead Finish
- Green Mold Compound
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Silicon Switching Diode
• For high-speed switching applications
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
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Higher performance levels in terms of recovery behavior, junction temperature, leakage current and switching losses, place ST's Rectifiers at the cutting edge of this sector.
Based on a large portfolio of Schottky Barrier (Signal and Power), including new avalanche rating, Bipolar Ultrafast Turbo 2 and Tandem diodes, Damper and Modulation devices, ST offers advanced and well-proven solutions for Power factor Corrector (PFC) lead, efficient Switch Mode Power Supply (SMPS) designs, Energy recovery for Plasma Display Panel (PDP), and more.
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Toshiba continues to offer the broadest line up of discrete products. Toshiba's Discrete solutions cover a breadth of products including Optoelectronics, Logic ICs, Small Signal, Microwave, Radio Frequency (RF) ICs, and Power devices.
Toshiba Power Semiconductors, RF, and Small Signal low frequency discrete devices consists of a wide array of Diodes, Linear ICs, Semi Custom ICs, Sensors, Thyristers, Triacs, and Transistors. Toshiba's Discrete products are designed for applications that require high reliability, power efficiency and a compact design.
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The AMMC-3040 is a broadband Double-Balanced Mixer (DBM) with an integrated high-gain LO amplifier. This MMIC can be used as either an up converter or down converter in microwave or millimeter wave applications. If desired, the LO amplifier can be biased to function as a frequency multiplier to enable second harmonic mixing of the LO input. The mixer section ofthe AMMC-3040 is fabricated using a suspended metal system to create a unique, broadside-coupled balun structure (patent pending) to achieve exceptional bandwidth. The MMIC provides repeatable conversion loss without tuning, making it highly suitable for automated assembly processes. For improved reliability and moisture protection, the die is passivated at the active areas.
Features
- High IIP3: +23 dBm
- Wide bandwidth
- RF: 18-36 GHz
- LO: 18-36 GHz
- IF: DC-3 GHz
- Fundamental or subharmonic mixing
- Up or down converter
- Conversion loss: 9.5 dB
- P1dB: +17 dBm
- Low LO drive power: +2 dBm
- Usable to 42 GHz
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1.0 AMP. Fast Recovery Rectifiers
Features:
- High efficiency, Low VF
- High current capability
- High reliability
- High surge current capability
- Low power loss
Mechanical Data
- Cases: Molded plastic
- Epoxy: UL 94V-0 rate flame retardant
- Lead: Pure tin plated, lead free, solderable per MIL-STD, Method 208 guaranteed
- Polarity: Color band denotes cathode end
- High temperature soldering guaranteed: 260 C/10 seconds
- Weight: 0.22 g
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*Amp.:1A~16A;Voltage:20V~100V;Package:SMA,SMB,SMC,SOD123,D2Pack,Mini-Melf,SOD-523,SOD-723,SOT-523,SOT-323,SOT-23,SC-59
*Amp.:1A~60A;Voltage:20V~200V;Package:R-1,DO-41,DO-15,DO-27,TO-220, ITO-220, TO-3P
-Eris employs strict quality control and various reliability tests by our precision equipments allowing us to provide the high quality products to our customers.
-If you need more information or need favorable quotation, please contact with Ms. Cindy Lin directly (cindy.lin@eris.com.tw)
Best Regards,
Eris Technology Corporation
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Silicon Carbide Schottky Diodes - NEW 3G now available!
Silicon Carbide (SiC) is a revolutionary material for power semiconductors, its physical properties outperform Si- and GaN power devices by far.
Features
* Benchmark switching behavior
* No reverse recovery
* No temperature influence on the switching behavior
* Standard operating temperature -55° to 175°C
SiC power devices enable increased efficiency, reduced solution size, higher switching frequency and produce significant less electromagnetic interference (EMI) ina variety of target applications:
* Power factor correction
* Solar and UPS inverters
* Motor drives
* Output rectification
Infineon offers SiC Schottky diodes in 300V, 600V and 1200V.
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10.0 A Surface Mount Schottky Barrier Rectifiers
Features:
- Plastic material used carries Underwriters Laboratory Classifications 94V-0
- Metal silicon junction, majority carrier conduction
- Low power loss, high efficiency
- High current capability, low forward voltage drop
- High surge capability
- For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications
- Guarding for overvoltage protection
- High temperature soldering guaranteed
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*Watt: 400W, 500W, 600W, 1500W, 3000W, 5000W; Package: DO-41,DO-15,DO-27,R-6.
*Watt: 200W, 400W, 600W, 1500W, 3000W, 5000W; Package:SOD-123, SMA, SMB, SMC
-Eris employs strict quality control and various reliability tests by our precision equipments allowing us to provide the high quality products to our customers.
-If you need favorable quotation of TVS diode or more information, please contact with Ms. Cindy Lin through her email address: cindy.lin@eris.com.tw
Looking forward to giving you support someday soon!
Best Regards,
Eris Technology Corporation
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600 Watts Transient Voltage Suppressor Diodes
Features
- Plastic package has Underwriters Laboratory Flammability Classification 94V-0
- Exceeds environmental standards of MIL-STD-19500
- 600W surge capability at 10 x 1000 us waveform
- Excellent clamping capability
- Low Dynamic impedance
- Fast response time: Typically less than 1.0ps from 0 volts to VBR for unidirectional and 5.0 ns for bidirectional
- High temperature soldering guaranteed: 260oC / 10 seconds / .375”,(9.5mm) lead length / 5lbs.,(2.3kg) tension
Mechanical Data
- Case: Molded plastic
- Lead: Axial leads, solderable per MIL-STD-202, Method 208
- Polarity: Color band denotes cathode except bipolar
- Weight: 0.34gram
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*Watt:500m, 1W, 3W, 5W; Package: DO-35,DO-41,DO-15, DO-27
*Watt:100m, 200m, 410m, 500m, 1W, 5W;Package:SOD-523, SOD-323, SOT-323, SOD-123, SOT-23,Mini Melf, SMA, SMB,SMC
-Eris employs strict quality control and various reliability tests by our precision equipments allowing us to provide the high quality products to our customers.
-If you need favorable quotation of Zener diode or more information, please contact with Ms. Cindy Lin through her email address: cindy.lin@eris.com.tw
Looking forward to give you support someday soon!
Best Regards,
Eris Technology Corporation
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FEATURES
• Voltage range 7.5 - 75 Volts
• 5000 Watt peak pulse power
• 100 Watt steady state @ 25°C
• 75 Watt steady state @ 65°C
• Glass passivated junction
• 5000 Watt surge capability at 1 ms
• Typically IR less than1 μA above 10V
• Excellent clamping capability
• Stud cathode & stud anode
• Operating temperature -55°C to +175°C
• 100% tested
MECHANICAL CHARACTERISTICS
• Case: Hermetically sealed DO5 outline
• Finish: All external surfaces are corrosion resistant and
terminal solderable
• Polarity: Indicated by direction of zener symbol
• Weight: 14 grammes excluding mounting kit (approx)
• Torque Setting 30inch/lb
ELECTRICAL DATA
• Forward voltage Vf 1.5V max @ If ≤ 10A 300μS square
wave pulse
• Vz measured with pulse ≤ 100μS and duty cycle ≤ 0.001
• Rz determined with DC plus 10% superimposed AC @ 1KHz
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3.0 Watts Surface Mount Silicon Zener Diode
Features
- For surface mounted applications in order to optimize board space
- Low profile package
- Built-in strain relief
- Glass passivated junction
- Low inductance
- High temperature soldering guaranteed: 260C / 10 seconds at terminals
- Plastic package has Underwriters Laboratory Flammability Classification 94V-0
Mechanical Data
- Case: Molded plastic over passivated junction
- Terminals: Pure tin plated lead free, solderable per MIL-STD-750, Method 2026
- Polarity: Color Band denotes positive end (cathode)
- Standard packaging: 12mm tape (EIA-481)
- Weight: 0.064 g
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The SP725 is an array of SCR/Diode bipolar structures for ESD and overvoltage protection of sensitive input circuits. The SP725 has 2 protection SCR/Diode device structures per input. There are a total of 4 available inputs that can be used to protect up to 4 external signal or bus lines. Overvoltage protection is from the IN (Pins 1 - 4) to V+ or V-.
The SCR structures are designed for fast triggering at a threshold of one +VBE diode threshold above V+ (Pin 5,6) or one –VBE diode threshold below V- (Pin 7,8). From an IN input, a clamp to V+ is activated if a transient pulse causes the input to be increased to a voltage level greater than one VBE above V+. A similar clamp to V- is activated if a negative pulse, one VBE less than V-, is applied to an IN input.
Features:
ESD Interface per HBM Standards
IEC 61000-4-2, Direct Discharge........... 8kV (Level 4)
IEC 61000-4-2, Air Discharge................15kV (Level 4)
MIL-STD-3015.7..................................................25kV
Peak Current Capability
IEC 61000-4-5 8/20 μs Peak Pulse Current...... ± 14 A
Single Transient Pulse, 100 μs Pulse Width....... ± 8A
Designed to Provide Over-Voltage Protection
Single-Ended Voltage Range to......................... +30V
Differential Voltage Range to............................. ±15V
Fast Switching...............................................2ns Risetime
Low Input Leakages...........................5 nA at 25 ºC Typical
Low Input Capacitance....................................5 pF Typical
An Array of 4 SCR/Diode Pairs
Operating Temperature Range..................-40ºC to 105ºC
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1.0 A Glass Passivated Bridge High Efficient Rectifiers
Features
- Glass passivated junction
- Ideal for printed circuit board
- Reliable low cost construction utilizing molded plastic technique
- High temperature soldering guaranteed: 260C / 10 seconds / 0.375” ( 9.5mm ) lead length at 5 lbs., ( 2.3 kg ) tension
- Small size, simple installation Leads solderable per MIL-STD-202, Method 208
- High surge current capability
Maximum Ratings and Electrical Charcteristics:
- Rating at 25 C ambient temperature unless otherwise specified.
- Single phase, half wave, 60 Hz, resistive or inductive load.
- For capacitive load, derate current by 20%
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This new family of devices combines multiple different discrete devices in the same surface mount case. The first series of these are packages in the newest smallest PICOmini™ SOT-563 case. By incorporating multiple devices in a single package, these devices assist the design engineer in meeting their strictest requirements for smaller discrete components and overall product size reduction.
Coupled with proven reliability and nothing less than total customer satisfaction, this family of components will provide answers to some of industries most demanding requirements.
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Part: IRF5851
Description: 20V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 6 package
IRF5851TR A IRF5851 with Tape and Reel Packaging
IRF5851TRPBF Similar to IRF5851TR with Lead-Free Packaging.
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Part: IRG4P254S
Description:250V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package
IRG4P254S A IRG4P254S with Standard Packaging
IRG4P254SPBF Similar to IRG4P254S with Lead Free Packaging
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