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This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes ...
DC voltage: 1.5 V - 3 V
Reverse voltage: 1,250, 600, 650 V
Renesas' fast recovery diodes offer quick recovery times for rectification purposes in very high-frequency applications.
Reverse voltage: 650 V
Shorter recovery time, enabling high-speed switching. FEATURES: Reduced temperature dependence High-speed switching possible High surge current capability
ROHM Semiconductor
Reverse voltage: 650 V
Shorter recovery time, enabling high-speed switching. FEATURES: Reduced temperature dependence High-speed switching possible High surge current capability
ROHM Semiconductor
Reverse voltage: 650 V
Shorter recovery time, enabling high-speed switching. FEATURES: Reduced temperature dependence High-speed switching possible High surge current capability
ROHM Semiconductor
DC voltage: 1.45 V - 2.2 V
Reverse voltage: 600 V - 1,200 V
... Star, 80Plus, and European Efficiency), ST's silicon-carbide diodes show four times better dynamic characteristics with 15% less forward voltage (VF) than standard silicon ...
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