Voltage: 100 V - 400 V
If you need bipolar transistors that can withstand high voltage pulses (EMI requirements), check out our high voltage devices with breakdown voltages from 100 V up to 400 V. Key features and benefits High VCEO ...
Voltage: 30 V
NPN Silicon Double Transistor Summary of Features: To be used as a current mirror Good thermal coupling and VBE matching High current gain Low collector-emitter saturation voltage Pb-free (RoHS compliant) ...
The MOSFETs integrate two HEXFET by IR is a dual powered device that offers low cost and space saving features in a dense, high component models for better chip board space sensitivity. It is available in a variety of designs such as ...
Voltage: 400 V
Current: 2 A
Central Semiconductors CMKT3920 consists of two 50V, 200mA NPN transistors packaged in the space saving SOT-363. Designed for general purpose amplification and switching, the CMKT3920 is ideal for a wide range of power ...