Voltage: 100 V - 400 V
If you need bipolar transistors that can withstand high voltage pulses (EMI requirements), check out our high voltage devices with breakdown voltages from 100 V up to 400 V. Key features and benefits High VCEO ...
Voltage: 30 V
NPN Silicon Double Transistor Summary of Features: To be used as a current mirror Good thermal coupling and VBE matching High current gain Low collector-emitter saturation voltage Pb-free (RoHS compliant) ...
The MOSFETs integrate two HEXFET by IR is a dual powered device that offers low cost and space saving features in a dense, high component models for better chip board space sensitivity. It is available in a variety of designs such as ...
Voltage: 60, 7, 50 V
Current: 200 mA
DESCRIPTION: The Central Semiconductor CMKT3920 (two single NPN transistors) is a dual combination in a space saving SOT-363 ULTRAmini™ package, designed for small signal general purpose amplifier and switching applications. MARKING ...