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... Silicon Bipolar RF Transistors and GaAs FETs. The GaAs FET RF transistors are ideal for the first or second stage of base station LNA due to the excellent combination ...
Features Ultra low noise PHEMT. The process is optimized to give very low noise figure for critical cellular/PCS base station and other wireless RF applications, high part-to-part consistency, and excellent reliability. The ATF-33143 ...
Broadcom
ATF-35143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-70 surface mount plastic package.
Broadcom
The ATF-511P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8-lead LPCC (JEDEC DFP-N) package. The device exhibits exceptional RF performance, power efficiency and product consistency in the 50MHz to 6 GHz frequency range.
Broadcom
The CENTRAL SEMICONDUCTOR CMPFJ175 and CMPFJ176 are epoxy molded P-Channel JFETs manufactured in an SOT-23 case, designed for low level amplifier applications. MARKING CODES: CMPFJ175: 6W CMPFJ176: 6X
Central Semiconductor
Voltage: 30 V
The CENTRAL SEMICONDUCTOR CMPFJ175 and CMPFJ176 are epoxy molded P-Channel JFETs manufactured in an SOT-23 case, designed for low level amplifier applications. MARKING CODES: CMPFJ175: 6W CMPFJ176: 6X
Central Semiconductor
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