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- Low-noise transistor
Low-noise transistors
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... Silicon Bipolar RF Transistors and GaAs FETs. The GaAs FET RF transistors are ideal for the first or second stage of base station LNA due to the excellent combination of low noise ...
Features Ultra low noise PHEMT. The process is optimized to give very low noise figure for critical cellular/PCS base station and other wireless RF applications, high ...
Broadcom
ATF-35143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-70 surface mount plastic package.
Broadcom
The ATF-511P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8-lead LPCC (JEDEC DFP-N) package. The device exhibits exceptional RF performance, power efficiency and product consistency ...
Broadcom
Current: 4 A
Voltage: 650 V
... R6xxxENx series are low-noise products, Super Junction MOSFETs, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications ...
ROHM Semiconductor
Current: 1.7 A
Voltage: 600 V
... series are low-noise products, Super Junction MOSFETs, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce ...
ROHM Semiconductor
Current: 76 A
Voltage: 600 V
R6076ENZ4 is a power MOSFET for switching applications. Low on-resistance Fast switching speed Parallel use is easy Pb-free plating ; RoHS compliant
ROHM Semiconductor
Current: 4 A
Voltage: 600 V
Power MOSFET R6004END3 is suitable for switching power supply. Low on-resistance Low radiation noise Fast switching Parallel use is easy Pb-free plating ; RoHS compliant
ROHM Semiconductor
Current: 11 A
Voltage: 650 V
R6511ENX is a power MOSFET with low on-resistance and fast switching, suitable for the switching application. Low on-resistance Fast switching speed Parallel use is easy Pb-free plating ; RoHS compliant
ROHM Semiconductor
Current: 11 A
Voltage: 650 V
R6511ENJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application. Low on-resistance Fast switching speed Parallel use is easy Pb-free plating ; RoHS compliant
ROHM Semiconductor
Current: 24 A
Voltage: 650 V
R6524ENJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application. Low on-resistance Fast switching speed Parallel use is easy Pb-free plating ; RoHS compliant
ROHM Semiconductor
Current: 30 A
Voltage: 650 V
R6530ENX is a power MOSFET with low-on resistance and fast switching speed, suitable for switching. Low on-resistance Fast switching speed Parallel use is easy Pb-free plating ; RoHS compliant
ROHM Semiconductor
Current: 4 A
Voltage: 600 V
... MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in ...
ROHM Semiconductor
Current: 30 A
Voltage: 600 V
... MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in ...
ROHM Semiconductor
Voltage: 50 V
... CMPT5086, CMPT5086B, and CMPT5087 are silicon PNP transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high gain and low ...
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