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10th Generation Power MOS FETs from Renesas deliver lower gate charge loss and lower conduction loss, which means less heat generation and higher efficiency of energy use. 10th Generation Power MOS FETs with on-chip Schottky Barrier Diode (SBD) are also available both in single and dual format.
The new DrMOS, a driver IC and two MOS FETs incorporated in a single 56-pin QFN package, is a great space saver with large current capability and high power efficiency.
To learn more about the latest development of Renesas Power MOS FETs, click here.
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We offer a new family of EiceDRIVER ™ IGBT / MOSFET gate driver ICs for applications from 600V up to 1200V blocking voltages. Based on innovative technologies including thin-film Silicon-On-Insulator technology (600V) and Coreless Transformer Technology (1200V), higher reliability, lower losses and better performance can be achieved.
Coreless Transformer Technology (CLT) allows the integration of a pulse transformer into an IC, combining the advantages of HVIC technology with the capability of a magnetic coupler. This results in an extremely rugged IC with high insulation capability. CLT allows faster switching speeds with no performance degradation compared to optocouplers, therefore providing constant reliability over the projected lifetime.
Thin-Film Silicon On Insulator (SOI) technology is an advanced technique for MOS/CMOS fabrications. It differs from the conventional bulk process by placing the active transistor layer on the top of an insulator. This leads to outstanding robustness against latch-up when exposed to extreme temperature and voltage conditions.
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General Description
The FDS8672S is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low rDS(on) and low gate charge. The FDS8672S includes a patented combination of a MOSFET monolithically integrated with a Schottky diode using Fairchild's monolithic SyncFET technology.
Features
- Max rDS(on) = 4.8mOhm at VGS = 10V, ID = 18A
- Max rDS(on) = 7.0mOhm at VGS = 4.5V, ID = 15A
- Includes SyncFET Schottky body diode
- High performance trench technology for extremely low rDS(on) and fast switching
- High power and current handling capability
- 100% Rg (Gate Resistance) tested
- Termination is Lead-free and RoHS Compliant
Applications
- Synchronous Rectifier for DC/DC Converters
- Notebook Vcore low side switch
- Point of load low side switch
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Part: IRF1302
Description: 20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
A IRF1302 with Standard Packaging
Similar to IRF1302 with Lead Free Packaging
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ST's proprietary strip layout technique and its derivatives have revolutionized Power MOSFETs. The Power MOSFET range includes the very advanced MDmesh%u2122 plus PowerMESH%u2122 products for high and very high voltage Power MOSFET applications.
The low voltage STripFET%u2122 family is optimized for DC-DC conversion, automotive, motion control and power management applications.
Power MOSFET performance is further boosted through innovative packaging concepts.
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TSM3900D: 20 V Dual N-Channel Mosfet
Features:
- Advance Trench Process Technology
- High Density Cell Design for Ultra Low On-resistance
Application:
- Load Switch
- PA Switch
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Toshiba continues to offer the broadest line up of discrete products. Toshiba's Discrete solutions cover a breadth of products including Optoelectronics, Logic ICs, Small Signal, Microwave, Radio Frequency (RF) ICs, and Power devices.
Toshiba Power Semiconductors, RF, and Small Signal low frequency discrete devices consists of a wide array of Diodes, Linear ICs, Semi Custom ICs, Sensors, Thyristers, Triacs, and Transistors. Toshiba's Discrete products are designed for applications that require high reliability, power efficiency and a compact design.
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DC-6 GHz Broadband MOSFET Quad Array
Extend the reach of your base stations with Peregrine integrated receive mixers. High linearity and remarkable input IP3 performance will pick distant signals out of the haze. Integrated matching RF and LO networks and the tiny 6-lead DFN package eliminate the need for bulky mixer modules or external RF baluns.
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Pulse, signal and ignition transformers
Pulse transformers
- for IGBT/MOSFET gate driver, triacs etc.
- high insulation and very low leakage inductance
- toroidal and linear design
- for capacitive discharge with high-voltage output
Transformers for signal treatment and galvanic insulation on various equipments
- in compliance to "Ex" intrinsic safety requirements too (Atex)
- toroidal and linear design
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Lower cost than toroidal equivalents
Frequency range of 10 - 250 kHz and up;VDE, IEC, UL, CSA compliant ;3750 Vrms isolation between windings ;Constructed with UL approved Class 130°C insulation system (UL File) ;E83628)
RoHS-compliant. Tin-silver over tin over copper terminations.
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