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VTP485S - Fast Response, High Dark Resistance Photodiode
Large area planar silicon mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. Low junction capacitance permits fast response time.
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InGaAs PIN Photodiodes
High quality Indium Gallium Arsenide (InGaAs) photodiodes designed for the 900 nm to 1700nm wavelength region.
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Photodiodes
PerkinElmer utilizes Silicon and InGaAs materials for their photodiodes to provide detection from 220 nm to 1700nm. These devices are offered in a variety of sizes to meet customer sensitivity and speed requirements. Additional pre-amplifier and filter options are available to tailor the device to meet specific requirements.
Avalanche photodiodes provide higher sensitivity than standard photodiodes. They are ideal for extreme low-level detection and photon counting. Offered in Silicon or InGaAs materials, these devices provide detectivity from 400 nm - 1100 nm. Multiple configurations are available to provide a wide range of sensitivity and speed options.
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A range of UV sensors which are intrinsically blind to the visible spectrum is distributed by Scitec Instruments. Other UV products offered include UV probes, current/voltage amplifiers, controllers and monitors and UV lamps.
NEW more competitive prices for some items and many NEW products now available.
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Features :
- Integrated TIA (Trans Impedance Amplifier)
- High gain and high sensitivity
- MSA compliant XMD (10 Gbit/s Miniature Device)
Applications:
- OC-192 and STM-64 (10Gbit/s) transmission systems
- Long haul and Metropolitan DWDM systems
- Small form Transponders and Transceivers
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PIN Silicon Photodiodes
The OP913WSL each consist of a PIN silicon photodiode mounted in a wo-leaded, TO-5 hermetically sealed package. The lensing effect of thr OP013SL allows an acceptance angle of 10 degree measured from the optical axis to the half power point. The flat lens of the OP913WSL has an acceptance half angle of 30 degree. The large active area allows very low light level detection
Features:
- Wide or Narrow receiving angle available
- Large active area (.115" * .115")
- Fast switching time
- Linear response vs irradiance
- Enhance temperature range
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Silicon photodiodes are semiconductor light sensors that generate a current or voltage when P-N junction in the semiconductor is illuminated by light. These devices feature excellent linearity with respect to incident light, have low internal noise, wide spectral response, are mechanically rugged, compact and lightweight with long life.
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PIN photodiodes for high speed applications:
- SMT PIN Photodiodes
- PIN Photodiodes in Through hole package
- Photodiodes for Special Applications
- Ultra fast PIN Photodiodes
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Detection Technology offers two series of high-quality photodiodes for various measurement purposes. Detection Technology's ultra-clean processing method provides excellent performance characteristics and high reliablity. The use of unique guard-ring concept offers impressive performance improvements.
Photodiodes in PDA series are optimized for applications requiring ultimate leakage current performance at unbiased operations. In the visible and NIR-region excellent light response can be used by using PDA series photodiodes.
PDC series photodiodes are extra high-resistivity PIN photodiodes with an excellent spectral response at 550 nm. This is achieved by using ultra pure starting material, special high-purity manufacturing process, and optimized optical filtering. PDC-series photodiodes also incorporate a unique guard-ring structure, which greatly reduces leakage current in biased operation.
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Photodiode Arrays (PDA) for Scientific Applications
AMI Semiconductor's WS and HS series are two distinct families of linear self scanned photodiode arrays. These photodiode sensors employ AMI Semiconductor's proprietary CMOS image sensing technology to integrate the sensors into a single monolithic chip. They are optimally designed for applications in spectroscopy and HPLC.
Features
- 65pC saturation capacity for wide dynamic range
- Wide spectral response (180 – 1000nm) for UV and IR response
- NP junction photodiodes with superior resistance to UV damage
- Low dark current
- Integration time up to nine seconds at room temperature
- Integration time extended to hours by cooling
- High linearity
- Low power dissipation (less than 1mW)
- Geometrical structure for enhanced stability and registration
- Standard 22 lead dual-in-line IC package
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Si photodiode arrays consist of multiple photodiode elements, formed in a linear or matrix arrangement in one package. Some arrays are supplied coupled with a CMOS multiplexer. The multiplexer simplifies design and reduces the cost of the output electronic circuit. Our Si photodiode arrays are used in a wide range of applications such as laser beam position detection, color measurement and spectrophotometry.
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Detection Technology provides both standard and customized single-row and multi-row photodiode arrays.
The standard ARB photodiode array series is available with 1.5 mm, 1.6mm and 2.5 mm pixel pitches. All the arrays are available both without scintillators or with a scintillator selected from a wide range of alternatives selected based on the required energy levels and performance.
The photodiode geometry can be customized to literally any shape and dimension. Based on the requirements on the characteristics and application environment given by customers, Detection Technology's application specialist team selects from its wide-range photodiode technologies, processing technologies as well as other design parameters to build a tailored solution.
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