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This stage with a 15 cm movable granite object table and a positioning accuracy of 100 nm is the ideal solution for fully automated routine measurements, and gives the highest AFM measurement stability. With the push of a button, you can switch between a high resolution, conventional microscope with DIC function and the AFM scanner, thus combining a quick visual control with a high resolution AFM measurement. The repositioning problems of working with more examination methods are totally eliminated. Upon request, we can include other measuring equipment also.
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The LEAP Si™ Metrology System is a high-performance atom probe microscope providing 3D, atomic resolution, compositional imaging and analysis to research and industry. Materials are examined by removing and analyzing individual atoms. Atoms are removed by a combination of a high electrical field and either: (1) an ultra-fast voltage pulse or (2) an ultra-fast laser pulse. The LEAP Si employs patented innovations that unlock the power of the 3D atom probe to address previously unsolved measurement challenges in semiconductors, material science, and nanomagnetics. Key features include: largest field of view, highest data rate, excellent mass resolution, and simplified sample preparation using microtip arrays. With the LEAP Si measurements that would have taken months, or been completely impossible, can be accomplished in a matter of hours.
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The LEAP HR is a high-performance atom probe microscope providing atomic resolution, 3D compositional imaging, and analysis to research and industry. Materials are examined by removing and analyzing individual atoms. Atoms are removed by a combination of a high electrical field and either: (1) an ultra-fast voltage pulse or (2) an ultra-fast laser pulse. Each ion is analyzed by measuring the time of flight to the detector through an energy-compensated time-of-flight mass spectrometer. The LEAP HR employs patented innovations that provide best in class mass resolution while simultaneously enabling a large field of view (> 150 nm). This combination of high mass resolution with large field of view provides breakthrough capability for advanced materials applications. The large field of view enables the material’s atomic scale features to be understood in the context of the larger scale nanostructure. High mass resolution permits narrowly separated mass peaks to be differentiated, ensuring accurate compositional information.
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The Scanning probe Microscope (SPM) was developed during the 1980s and is now an indispensable tool for the direct high resolution study of surfaces and surface forces. Starting with the scanning tunneling microscope in 1981, the technique was broadened to atomic force microscopy including contact, non-contact, and discrete contact modes by 1988. By changing the force-sensing probe it is possible to detect magnetic forces, electrical forces, frictional forces, surface elasticity, and visco-elasticity, etc. The SPM is currently being used to study samples ranging from semiconductor surfaces and devices, thin films, archeological artifacts, compact discs, computer hard drives, magnetic media, electrical properties of materials, biological materials, to name a few.
Our SPM product line is comprised of the following offerings:
JSPM-4500 Scanning Probe Microscope: designed for the high resolution study of surfaces.
JSPM-5200 Environmental Scanning Probe Microscope: a multipurpose, high resolution SPM offering ease of use with diverse measurement and sample environments.
JSPM-5400 Environmental Scanning Probe Microscope: a multipurpose, high resolution SPM offering ease of use with diverse measurement and sample environments.
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The MULTIPROBE P is a dual-chamber surface science UHV system with a large multi-technique analysis chamber for electron spectroscopy and UHV scanning probe microscopy, and a separate sample preparation chamber with FEL. The preparation chambers in the MULTIPROBE P offers standard sample preparation facilities like thin film growth or sample sputtering and heating.
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Laser Pulsing Mode expands the universe of applications for LEAP to low electrical conductivity materials including semiconductors and ceramics. In laser pulsing mode the LEAP electrode applies a static field to the specimen while an ultra-fast laser pulse triggers the removal of an atom. The Imago Laser Pulsing Module features a high pulse-repetition rate and proprietary real-time, optical-alignment correction which together enable high mass resolution, a large field of view, and fast time to results.
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