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*Amp.:1A~16A;Voltage:20V~100V;Package:SMA,SMB,SMC,SOD123,D2Pack,Mini-Melf,SOD-523,SOD-723,SOT-523,SOT-323,SOT-23,SC-59
*Amp.:1A~60A;Voltage:20V~200V;Package:R-1,DO-41,DO-15,DO-27,TO-220, ITO-220, TO-3P
-Eris employs strict quality control and various reliability tests by our precision equipments allowing us to provide the high quality products to our customers.
-If you need more information or need favorable quotation, please contact with Ms. Cindy Lin directly (cindy.lin@eris.com.tw)
Best Regards,
Eris Technology Corporation
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Silicon Carbide Schottky Diodes - NEW 3G now available!
Silicon Carbide (SiC) is a revolutionary material for power semiconductors, its physical properties outperform Si- and GaN power devices by far.
Features
* Benchmark switching behavior
* No reverse recovery
* No temperature influence on the switching behavior
* Standard operating temperature -55° to 175°C
SiC power devices enable increased efficiency, reduced solution size, higher switching frequency and produce significant less electromagnetic interference (EMI) ina variety of target applications:
* Power factor correction
* Solar and UPS inverters
* Motor drives
* Output rectification
Infineon offers SiC Schottky diodes in 300V, 600V and 1200V.
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10.0 A Surface Mount Schottky Barrier Rectifiers
Features:
- Plastic material used carries Underwriters Laboratory Classifications 94V-0
- Metal silicon junction, majority carrier conduction
- Low power loss, high efficiency
- High current capability, low forward voltage drop
- High surge capability
- For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications
- Guarding for overvoltage protection
- High temperature soldering guaranteed
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