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LASER-Assisted
3D Atom Probe for Semiconductors and Materials
The CAMECA LA-WATAP instrument is the next generation of Tomographic (or 3D) Atom Probe, providing quantitative atomic scale 3D elemental mapping of chemical heterogeneities in materials.
The LA-WATAP offers the following advantages:
Analysis of semiconductor materials with near-atomic depth resolution. This is possible by using a flexible (IR/ visible/ UV) ultrafast (400fs) laser setup. The unique hybrid evaporation mode combines reduced heating of the sample with ultra-fast surface polarisation promoting ion evaporation under the high DC electrical field.
Excellent mass resolution even on low thermal conductivity materials. This is obtained by reducing the heating of the sample with ultra-fast laser pulsing. Conventional picosecond laser based 3DAP work in thermal evaporation mode leading to thermal effects and peak tails.
Analysis of thin electrically insulating layers by using fs-laser pulses of short wavelength (UV).
Highest analyzer transmission (detected ions/evaporated atoms >60%). Reflectron-based 3DAP instruments reduce this typically to 35% due to the use of grids. Transmission is a key parameter when applying the (destructive) 3DAP technique to the quantification of nanoscale volumes.
Large analysis area (100nm in diameter) for a better statistics on composition measurements.
Fast acquisition, up to 1E6 atoms per minute depending on sample strength (flux of at./pulse).
Best quantitative results with the exclusive Advanced Delay Line Detector (ADLD) and its benchmark multi-hit performance.
Flexible and fast dedicated FIM (Field Ion Microscopy) detector for metallurgical application with highest S/N performance and fast switch between FIM and 3DAP modes.
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