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From low saturation voltage IGBT, high gain and low noise/distortion small signal Bip-TRSs to MOSFET for small signal switching, Renesas offers high performance, low profile and small footprint transistors for diversified applications.
For more details on Renesas Transistors, visit hte URL below.
http://eu.renesas.com/fmwk.jsp?cnt=transistor_family_landing.jsp&fp=/products/discrete/transistors/
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Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
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Characterized by high innovation trends based on an old fashioned technology, ST's power bipolar transistors have evolved from general purpose devices to Application Specific Products. The new enhanced collector diffused technology has been tailored for very high voltage horizontal deflection circuit used in high end TVCs and monitors. The low voltage product range has been enlarged with the latest base island technology to provide the best performance in low-medium power applications, targeting the computer consumer market segments in motherboards, hard-disk drivers, mobile chargers, emergency lighting, laptop back light illumination.
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High Voltage NPN Transistor
Features:
- High Voltage
- High Speed Switching
Structure:
- Silicon Triple Diffused Type
- NPN Silicon Transistor
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Part: IRF5851
Description: 20V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 6 package
IRF5851TR A IRF5851 with Tape and Reel Packaging
IRF5851TRPBF Similar to IRF5851TR with Lead-Free Packaging.
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Power Transistor Arrays (Multi-chip, 4 Circuits) ;Small Signal Transistor Arrays (Multi-chip) ;Small Signal Transistor Arrays (Monolithic) ;J-FET+Bipolar Transistors
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Toshiba offers an ultra linear GaAs FETs product family, designated the UL family, for C-Band frequency range with higher gain, lower intermodulation distortion and higher efficiency. The UL product family includes products from 4 watts (W) up to 25W and was developed for point-to-point microwave digital radio for terrestrial communications and block up converter or VSAT terminal for satellite communications.
Toshiba America Electronic Components, Inc. (TAEC) is the North American engineering, manufacturing, marketing, and sales arm for Toshiba Microwave Semiconductors. TAEC has established customer service, engineering support sales offices, and sales representatives throughout North America to provide the best possible service.
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The FH1 is a high dynamic range FET packaged in a lowcost
surface-mount package. The combination of low noise
figure and high output IP3 at the same bias point makes it
ideal for receiver and transmitter applications. The device
combines dependable performance with superb quality to
maintain MTTF values exceeding 100 years at mounting
temperatures of +85 °C. The FH1 is available the
environmentally-friendly lead-free/green/RoHS-compliant
SOT-89 package.
The device utilizes a high reliability GaAs MESFET
technology and is targeted for applications where high
linearity is required. It is well suited for various current
and next generation wireless technologies such as GPRS,
GSM, CDMA, and W-CDMA. In addition, the FH1 will
work for other applications within the 50 to 4000 MHz
frequency range such as fixed wireless.
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Toshiba Power Semiconductors, RF, and Small Signal low frequency discrete devices consists of a wide array of Diodes, Linear ICs, Semi Custom ICs, Sensors, Thyristers, Triacs, and Transistors. Toshiba's Discrete products are designed for applications that require high reliability, power efficiency and a compact design.
Toshiba offers a wide range of power MOSFET, power transistor modules with or without insulatead heat sink covers up to high power.
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR MMPQ2222A, consisting of four transistors and available in the SOIC-16 surface mount package, is designed for general purpose amplifier and switching applications.
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Offering a broad portfolio of RF Power products, Freescale Semiconductor serves numerous RF markets including wireless infrastructure, broadcast and industrial, scientific and medical markets. Freescale's leading RF Power product offerings meet the increasing demands of ISM, microwave and personal communication systems, including cellular infrastructure, broadband data, WiMAX, TV broadcast, UHF/VHF broadcast and land mobile. With a long history of experience and innovation, Freescale delivers the quality, reliability and consistency that our customers depend on.
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STMicroelectronics offers a wide product portfolio of small signal industry standard devices in the well-known TO-18 and TO-39 metal can packages and high voltage small signal transistors in plastic packages for use in a broad range of applications/market segments.
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD112, CJD117 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed switching and amplifier applications.
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NPN Silicon Digital Transistors
• Switching circuit, inverter circuit,driver circuit
• Built in bias resistor (R1= 1 kΩ, R2= 10 kΩ)
• BCR523U: Two (galvanic) internal isolated transistors with good matching in one package
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
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This new family of devices combines multiple different discrete devices in the same surface mount case. The first series of these are packages in the newest smallest PICOmini™ SOT-563 case. By incorporating multiple devices in a single package, these devices assist the design engineer in meeting their strictest requirements for smaller discrete components and overall product size reduction.
Coupled with proven reliability and nothing less than total customer satisfaction, this family of components will provide answers to some of industries most demanding requirements.
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UPSs
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