Voltage: 30 V
Current: 0 A - 44 A
HS8K11 is standard MOSFET for switching application. Features · Low on-resistance. · Pb-free lead plating; RoHS compliant. · Halogen Free. Specifications Package Code: HSML3030L10 Number of terminal:10 Polarity: Nch+Nch ...
Voltage: 50, 60, 12 V
Current: 0.1, 0.5, 1 A
Digital transistors are invented by Rohm first in the market, which is the transistor combining built-in resistor(s) for convenience of digital circuit. This product segment is becoming further extensive ...
Voltage: 0 V - 120 V
Current: 0 A - 5 A
Available in the variety of packages having the nature such as small-signal, thin and high-power to cover the market extensively.
Voltage: 1,200 V
Current: 600 A
Littelfuse IGBT modules offer high efficiency and fast switching speeds of modern IGBT technology in a robust and flexible format. Used for power control applications, Littelfuse offers an expanded portfolio ...
ST offers a wide range of automotive-grade smart 3 and 5-pin low-side switches (OMNIFET) based on VIPower (vertical intelligent power) technology. This proprietary technology allows integration of complete digital and analog control and ...
The SLLIMM intelligent power modules belong to the family of IPMs which allow the combination of optimized silicon chips and incorporates with 3 main inverter blocks: power stage (short-circuit rugged IGBTs and freewheeling diodes),driving ...
Voltage: 300 V - 1,200 V
Current: 4 A - 120 A
... energy efficient system designs and its reliability, ST's IGBT is leading the industry. Its voltages ranging from 350 V to 1300 V and Low VCE(SAT) for reduced conduction losses made ST's IGBT the top ...
New MIDA series - IGBT modules. IGBT (insulated gate bipolar transistor) is a combined transistor including a MOSFET driver and output bipolar cascade. Such devices ...
MIAA/MIFA series - IGBT modules. IGBT (insulated gate bipolar transistor) is a combined transistor including a MOSFET driver and output bipolar cascade. Such devices ...
Voltage: 50 V
Current: 0.8 A
DC Current Gain hFE Max.:400 DC Current Gain hFE Min.:160 Description:TO-92, 50V, 0.8A, NPN Bipolar Transistor IC (A):0.8 PD (W):0.625 Package:TO-92 Polarity:NPN Status:Active TJ Max. (°C):150 VCBO (V):50 VCE ...
Voltage: 50 V
Current: 0.8 A
DC Current Gain hFE Max.:630 DC Current Gain hFE Min.:250 Description:TO-92, 50V, 0.8A, NPN Bipolar Transistor IC (A):0.8 PD (W):0.625 Package:TO-92 Polarity:NPN Status:Active TJ Max. (°C):150 VCBO (V):50 VCE ...
Voltage: 30 V
Current: 0.8 A
DC Current Gain hFE Max.:250 DC Current Gain hFE Min.:100 Description:TO-92, 30V, 0.8A, NPN Bipolar Transistor IC (A):0.8 PD (W):0.625 Package:TO-92 Polarity:NPN Status:Active TJ Max. (°C):150 VCBO (V):30 VCE ...
Voltage: 12 V - 100 V
The N-Channel MOSFET Transistor technology is remarkably designed to provide half the gate charge for the same resistance. It also helps for designers to achieve 90% power-supply efficiencies with double the frequency. ...
The MCP87000 family of high-speed MOSFETs have been designed to optimize the trade-off between ultra-low On-state resistance (Rds-on) and Gate Charge (Qg) to maximize power conversion efficiency in switched mode power supplies. Features Low ...
The Power MOSFET family by Renesas Electronics includes breakdown ranges from 25-1,500V Vdss making it ideal for a variety of automotive, industrial and consumer applications. The wide range of current ratings up to 180A drain current ...
Voltage: 30 V - 300 V
Infineon, the company known for delivering the best in power management applications has developed a range of products known for their excellent performance, energy efficiency and durability. With their breakthrough technologies, our ...
Voltage: 500, 250 V
Current: 43, 10 A
FAIRCHILD presents their newest line of automotive ignition with IGBT. It is specially designed to have the highest clamp energy density of all devices on the market and low saturation voltage. Provides optimum performance and caters ...
Voltage: 20 V
Current: 100, 82 A
Toshiba offers a wide range of bipolar transistors suitable for various applications, including radio-frequency (RF) and power supply devices.
Voltage: 8 V
Current: 41 mA
Key Features Frequency Range: DC - 20 GHz 24 dBm Typical Output Power - P1dB 14 dB Typical Gain @ 12 GHz 55% PAE Typical @ 12 GHz 0.9 dB Typical NF @12 GHz No Vias Technology: 0.25 um GaAs pHEMT Qorvo's TGF2025 is a discrete ...
Voltage: 2.7 V
Current: 1 mA - 10 mA
Features Microcurrent device offering good RF performance at 1mA-10mA. The AT-310XX is housed in a variety of packages and is well suited for paging, cellular/PCS, and other RF applications. NF=0.9dB, Gain=13dB at 3V, 1mA; P1dB= 9dBm ...
... for new designs HousingSEMITOP 3 (55x31x12) (LLxBBxHH)55x31x12 SwitchesSix Pack VCES in V600 ICnom in A6 TechnologyNPT IGBT (Ultrafast)
Voltage: 30 V - 80 V
Fulfil your amplification and switching needs with our Darlington transistors. There are numerous PNP and NPN devices to choose from, all delivering very high DC current gain.
protection functions ESD and Transient voltage protection Shoot-through protection Very low VCE(sat) with positive temperature coefficient
Current: 25, 100 A
25 A transistor switch Regularly actuated mechanical actuators require regular maintenance. If there are high current levels in DC operation, the contacts will become worn through erosion. Contact-free actuators ...
Voltage: 3.5 V - 350 V
Current: 0.04 A - 16 A
Audio transistors for high power audio circuits.
Vishay’s IGBT modules are available with several different configurations, including half-bridge, full-bridge, chopper, and 6PAK inverter. A wide collector current range, up to 200 A, is available.
Avago's hermetic Power MOSFETs are convenient replacements for mechanical and solid state relays where high component reliability with standard footprint lead configuration is desirable.
Voltage: 40, 60, 50 V
Features • Ceramic surface mount package • Small package to minimize circuit board area • Hermetically sealed • Processed per per MIL-PRF-19500/255 Description The 2N2222AUA (TX, TXV) is a herme
Feature - Soft punch through silicon - Isolated MMC base with AIN substrate - High thermal cycling capability Main Applications - General chopper - General inverter - PWM rectifier - Power system compensator - Motor drive equipment - ...
IGBT Module · Hermetic Core Construction for operation up to 800A · Altitude Operation to 50K feet · High Frequency Switching Operation at Temp Extremes · Internal Layout with minimized ...
Voltage: 20, 50 V
N-Channel MOSFET and NPN Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package ...
How to choose this product
A transistor is a three-terminal semiconductor device used to switch or amplify electronic signals and power.
Bipolar technology is used in analog and power electronics, especially for current amplification and voltage regulation. MOFSET transistors work well in power and high-voltage switching, motor control and in switched mode power supplies.
Bipolar and field-effect (FET) transistors work differently. The former is base-current controlled, while the latter is grid-voltage controlled. They differ in the nature of the voltage drop in the controlled circuit. Bipolar models have a minimal drop between semiconductor junctions. FETs have very low output resistance, on the order of several milliohms.
Bipolar transistors are n- or p-type, depending on control current direction at the base. N-channel FETs offer better performance than p-channel models with negative-source voltage control. There are other types of transistors: those used for radio frequency and high-frequency applications, high-gain Darlington transistors, IGBTs and JFETs.
How to choose
Choice will primarily depend on current and voltage specifications, frequency limits and packaging.