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MOSFET transistor / power / silicon
MOSFET transistor
HS8K11

Voltage: 30 V
Current: 0 A - 44 A

HS8K11 is standard MOSFET for switching application. Features · Low on-resistance. · Pb-free lead plating; RoHS compliant. · Halogen Free. Specifications Package Code: HSML3030L10 Number of terminal:10 Polarity: Nch+Nch ...

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ROHM Semiconductor
bipolar transistor / small-signal / with built-in bias resistors / digital
bipolar transistor
DTA series

Voltage: 50, 60, 12 V
Current: 1, 0.5, 0.1 A

Digital transistors are invented by Rohm first in the market, which is the transistor combining built-in resistor(s) for convenience of digital circuit. This product segment is becoming further extensive ...

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ROHM Semiconductor
bipolar transistor / power / small-signal / silicon
bipolar transistor

Voltage: 0 V - 120 V
Current: 0 A - 5 A

Available in the variety of packages having the nature such as small-signal, thin and high-power to cover the market extensively.

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ROHM Semiconductor
bipolar transistor / small-signal / with built-in bias resistors / digital
bipolar transistor
DTA Series

Voltage: 0.1, 1, 0.5 V

Digital transistors are invented by Rohm first in the market, which is the transistor combining built-in resistor(s) for convenience of digital circuit. This product segment is becoming further extensive ...

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ROHM Semiconductor
bipolar transistor / power / silicon
bipolar transistor
2S series

Voltage: 0 V - 400 V
Current: 0 A - 6 A

Available in the variety of packages having the nature such as small-signal, thin and high-powerto cover the market extensively.

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ROHM Semiconductor
IGBT transistor module
IGBT transistor module
MG12600WB-BR2MM Series

Voltage: 1200 V
Current: 600 A

Littelfuse IGBT modules offer high efficiency and fast switching speeds of modern IGBT technology in a robust and flexible format. Used for power control applications, Littelfuse offers an expanded portfolio ...

MOSFET transistor / power
MOSFET transistor
VND series

ST offers a wide range of automotive-grade smart 3 and 5-pin low-side switches (OMNIFET) based on VIPower (vertical intelligent power) technology. This proprietary technology allows integration of complete digital and analog control and ...

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STMicroelectronics
IGBT transistor module
IGBT transistor module
STGIP series

The SLLIMM intelligent power modules belong to the family of IPMs which allow the combination of optimized silicon chips and incorporates with 3 main inverter blocks: power stage (short-circuit rugged IGBTs and freewheeling diodes),driving ...

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STMicroelectronics
IGBT transistor / power
IGBT transistor

... energy efficient system designs and its reliability, ST's IGBT is leading the industry. Its voltages ranging from 350 V to 1300 V and Low VCE(SAT) for reduced conduction losses made ST's IGBT the top ...

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STMicroelectronics
bipolar transistor / Darlington / power
bipolar transistor

These groundbreaking bipolar transistors are specially manufactured by ST and this highly specialized tool incorporates a broad range of power. It is specifically created to produce energy-efficient designs. This magnificent ...

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STMicroelectronics
MOSFET transistor / power
MOSFET transistor

STs MOSFET portfolio works with many voltages that go from -500 to 1500 V and work with low on-resistance ratings with a good package to boot. This is all designed with high and low-voltage support and is more efficient than most other ...

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STMicroelectronics
IGBT transistor module
IGBT transistor module
MIAA/MIFA

MIAA/MIFA series - IGBT modules. IGBT (insulated gate bipolar transistor) is a combined transistor including a MOSFET driver and output bipolar cascade. Such devices ...

IGBT transistor module
IGBT transistor module
MIDA

New MIDA series - IGBT modules. IGBT (insulated gate bipolar transistor) is a combined transistor including a MOSFET driver and output bipolar cascade. Such devices ...

MOSFET transistor / power
MOSFET transistor

The MCP87000 family of high-speed MOSFETs have been designed to optimize the trade-off between ultra-low On-state resistance (Rds-on) and Gate Charge (Qg) to maximize power conversion efficiency in switched mode power supplies. Features Low ...

MOSFET transistor / power
MOSFET transistor

The Power MOSFET family by Renesas Electronics includes breakdown ranges from 25-1,500V Vdss making it ideal for a variety of automotive, industrial and consumer applications. The wide range of current ratings up to 180A drain current ...

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Renesas Electronics
IGBT transistor / power
IGBT transistor
G6H, G7H series

... Renesas are bases on thin wafer trenches that are enhanced thus setting new benchmarks in technology. The product lineup for IGBT does include some of the high current IGBT's for circuits of power supplies like PFC's, ...

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Renesas Electronics
MOSFET transistor / power / small-signal
MOSFET transistor

Voltage: 30 V - 300 V

Infineon, the company known for delivering the best in power management applications has developed a range of products known for their excellent performance, energy efficiency and durability. With their breakthrough technologies, our ...

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Infineon Technologies - Sensors
MOSFET transistor / power / small-signal / for automotive applications
MOSFET transistor

Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and ...

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Infineon Technologies - Sensors
IGBT transistor / power
IGBT transistor
FG, ISL9 series

Voltage: 500, 250 V
Current: 10, 43 A

FAIRCHILD presents their newest line of automotive ignition with IGBT. It is specially designed to have the highest clamp energy density of all devices on the market and low saturation voltage. Provides optimum performance and caters ...

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Fairchild Semiconductor
bipolar transistor / power
bipolar transistor
BD, FJ, KS, D4x, TIP series

Voltage: 0 V - 800 V
Current: 0 A - 20 A

Fairchild introduces an extensive and proven transistor product portfolio that transcends any other similar equipment available in the market today. Based on the application that you wish to adapt, your chosen design ...

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Fairchild Semiconductor
bipolar transistor / small-signal / wide-band / RF
bipolar transistor
AFT, MRF series

Freescale offers a wide variety of RF products. These products are used in several markets, including wireless personal area network, wireless infrastructure, broadcast, general purpose amplifier, smart energy, medical, consumer and industrial ...

field-effect transistor / FET / power / RF
field-effect transistor
MRFG350x series

Voltage: 6, 12 V

This new Freescale semiconducter has a very wide range of use. It can be used to tackle all the modern, complex and challenging power applications. Some of the areas where these devices can be used include on: high performance RFICs, ...

MOSFET transistor / power
MOSFET transistor
CSD series

Voltage: 12 V - 100 V

The N-Channel MOSFET Transistor technology is remarkably designed to provide half the gate charge for the same resistance. It also helps for designers to achieve 90% power-supply efficiencies with double the frequency. ...

MOSFET transistor / power
MOSFET transistor
HEXFET®

With the continuously changing demands of the industrial markets there is an apparently growing need for dependable and rugged switching devices. Pushing the limits of efficiency and reliability, new designs are based on demands for more ...

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International Rectifier
MOSFET transistor / power / double
MOSFET transistor
IRF series

The MOSFETs integrate two HEXFET by IR is a dual powered device that offers low cost and space saving features in a dense, high component models for better chip board space sensitivity. It is available in a variety of designs such as ...

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International Rectifier
bipolar transistor / power
bipolar transistor

Voltage: 20 V
Current: 100, 82 A

Toshiba offers a wide range of bipolar transistors suitable for various applications, including radio-frequency (RF) and power supply devices.

IEGT transistor module
IEGT transistor module

Voltage: 3300 V
Current: 1500 A

... 1500A power module. The MG1500FXF1US71 PMI (plastic case module IEGT) integrates an N-channel IEGT (injection-enhanced gate transistor) and an SiC fast recovery diode (FRD) into a package with a footprint of just 140mm ...

HEMT transistor / power / GaAs
HEMT transistor
TGF2025

Voltage: 8 V
Current: 41 mA

Key Features Frequency Range: DC - 20 GHz 24 dBm Typical Output Power - P1dB 14 dB Typical Gain @ 12 GHz 55% PAE Typical @ 12 GHz 0.9 dB Typical NF @12 GHz No Vias Technology: 0.25 um GaAs pHEMT Qorvo's TGF2025 is a discrete ...

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Triquint Semiconductor
HEMT transistor / power / GaAs
HEMT transistor
TGF2040

Voltage: 8 V
Current: 65 mA

Key Features Frequency range: DC - 20 GHz 26 dBm typical output power - P1dB 13 dB typical gain @ 12 GHz 55% PAE typical @ 12 GHz 1.1 dB typical NF @12 GHz No Vias Technology: 0.25 um GaAs pHEMT Qorvo's TGF2040 is a discrete ...

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Triquint Semiconductor
FET transistor / silicon
FET transistor
CMPFJ175

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Central Semiconductor
FET transistor / silicon
FET transistor
CMPFJ176

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPFJ175 and CMPFJ176 are epoxy molded P-Channel JFETs manufactured in an SOT-23 case, designed for low level amplifier applications. MARKING CODES: CMPFJ175: 6W CMPFJ176: 6X

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Central Semiconductor
IGBT transistor module
IGBT transistor module
SKiM® 4/5

SKiM® 4/5 The reliability of SKiM 4/5 modules is confirmed by over 10 years of experience in the field. These baseplate-less modules convince by low thermal resistance to the cooling plate as well as by their high load-cycle capability ...

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SEMIKRON
IGBT transistor module
IGBT transistor module
SEMITRANS® 10

... ) and 1700V (1000A/1400A) half-bridge topologies as well as MLI in 1200V IGBT technology and 1200A nominal output current. High availability is ensured by the use of multiple IGBT sources and SEMIKRON CAL diodes.

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SEMIKRON
Darlington transistor / switching
Darlington transistor

Voltage: 30 V - 80 V

Fulfil your amplification and switching needs with our Darlington transistors. There are numerous PNP and NPN devices to choose from, all delivering very high DC current gain.

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NXP Semiconductors
bipolar transistor / small-signal / double
bipolar transistor

Voltage: 100 V - 400 V

If you need bipolar transistors that can withstand high voltage pulses (EMI requirements), check out our high voltage devices with breakdown voltages from 100 V up to 400 V. Key features and benefits High VCEO ...

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NXP Semiconductors
IGBT transistor module
IGBT transistor module
LUH, LWH, LEF, LFC series

protection functions ESD and Transient voltage protection Shoot-through protection Very low VCE(sat) with positive temperature coefficient

IGBT transistor / power
IGBT transistor

Voltage: 75 V - 1200 V
Current: 200 A - 900 A

Automotive modules of LSIS are optimized for Battery vehicle (NEV, Golf car and Forklift), Hybrid and Electric Vehicle. Power supply system and Welding machine with high reliability, which meets customers requirements. They cover the ...

field-effect transistor / power / for automotive applications
field-effect transistor

Current: 25, 100 A

25 A transistor switch Regularly actuated mechanical actuators require regular maintenance. If there are high current levels in DC operation, the contacts will become worn through erosion. Contact-free actuators ...

IGBT transistor / switching
IGBT transistor
TSG series

Voltage: 1000, 1200 V
Current: 15, 40, 60, 25 A

The TSG10N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device ...

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Taiwan Semiconductor
MOSFET transistor / power
MOSFET transistor
TSM series

Features % Advance Trench Process Technology % High Density Cell Design for Ultra Low On-resistance Application % Load Switch % PA Switch

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Taiwan Semiconductor
bipolar transistor / power
bipolar transistor

Voltage: 3.5 V - 350 V
Current: 0.04 A - 16 A

Audio transistors for high power audio circuits.

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ON Semiconductor
bipolar transistor / power
bipolar transistor

Voltage: 0.24 V - 3.5 V

NPN, PNP, and Complementary Transistors Broad portfolio of bipolar NPN and PNP transistors.

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ON Semiconductor

How to choose this product

transistor

A transistor is a three-terminal semiconductor device used to switch or amplify electronic signals and power.

Applications

Bipolar technology is used in analog and power electronics, especially for current amplification and voltage regulation. MOFSET transistors work well in power and high-voltage switching, motor control and in switched mode power supplies.

Technologies

Bipolar and field-effect (FET) transistors work differently. The former is base-current controlled, while the latter is grid-voltage controlled. They differ in the nature of the voltage drop in the controlled circuit. Bipolar models have a minimal drop between semiconductor junctions. FETs have very low output resistance, on the order of several milliohms.

Bipolar transistors are n- or p-type, depending on control current direction at the base. N-channel FETs offer better performance than p-channel models with negative-source voltage control. There are other types of transistors: those used for radio frequency and high-frequency applications, high-gain Darlington transistors, IGBTs and JFETs.

How to choose

Choice will primarily depend on current and voltage specifications, frequency limits and packaging.