Ion implanter: high energy, high speed
0.04 - 4.5 MeV | Optima XEx
Axcelis Technologies
- Broadest Energy Range. 40keV to 4.5 MeV energy range provides complete applications coverage allowing a single tool to support chipmakers' dynamic high energy requirements for DRAM, NAND and NOR FLASH, embedded memory, image sensor and logic device manufacturing.
- Highest Productivity. High speed wafer handling (500 wph) combined with the highest usable beam current results in a two-fold productivity advantage over the competition.
- Unmatched Reliability. Utilizes the reliable production proven RF LINAC accelerator with worlds largest installed base and benchmark performance levels of >90% uptime.
- Upstream Dose Control. Unique system positions the dose measurement system strategically within the beam line, allowing it to make precise dose measurements while being unaffected by photoresist outgassing. The results are precise, uniform implants at the highest possible throughputs.








