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Field effect transistor (FET)
Clare

  • field effect transistor (FET) Clare
Clare's N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.
The vertical DMOS process yields a robust device for high power applications with high input impedance. These highly reliable FET devices have been used extensively in Clare's solid state relays for industrial and telecommunications applications.

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