The EM47DM1688SBA is a high speed Double Date Rate 3 (DDR3) Synchronous DRAM fabricated with ultra high performance CMOS process containing 2G bits which organized as 16Mbits x 8 banks by 16 bits. This synchronous device achieves high speed double-data-rate transfer rates of up to 1600 Mb/sec/pin (DDR3-1600) for general applications. The chip is designed to comply with the following key DDR3 SDRAM features: (1) posted CAS with additive latency, (2) write latency = read latency -1, (3) On Die Termination (4) programmable driver strength data,(5) seamless BL4 access with bank-grouping. All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and /CK falling).
