High precision pressure sensor
0 - 500 mbar / 0 - 1500bar ± 0.1 % FS | HI2000
ESI Technology Ltd
HISPEC© HI2000 HIGH SPECIFICATION PRESSURE TRANSDUCER
SILICON-ON-SAPPHIRE SENSOR TECHNOLOGY
PRESSURE RANGES 0-500mbar TO 0-1500bar
VOLTAGE OUTPUT
ACCURACY 0.1% NLHR
OPTIONAL ATEX APPROVED VERSION
ALL TITANIUM ALLOY WETTED PARTS
HIGH SPECIFICATION
The HISPEC HI2000 series of pressure transducers with state-of-the-art Silicon-on-Sapphire sensor technology offer levels of accuracy and performance previously unobtainable or prohibitively expensive.
The unique Silicon-on-Sapphire sensor technology provides outstanding performance and gives excellent stability over a wide temperature range. The advanced sensor design consists of a piezoresistive silicon strain gauge circuit, which is epitaxially grown onto the surface of a sapphire diaphragm to form a single crystalline structure. The sapphire sensor element is then molecularly bonded to a Titanium alloy sub-diaphragm. This enables the sensor to endure higher over- pressures and provides superb corrosion resistance. The completed sensor exhibits virtually no hysteresis and excellent long-term stability. With outstanding insulation properties, the sapphire substrate allows the sensor to operate over a very wide temperature range without loss of performance.
Applications include aerospace, laboratory and test, oil and gas monitoring equipment (down-hole) and subsea. Available in pressure ranges from 0-500mbar to 0-1500bar and with electrical outputs of 10mV/V, 0-5Vdc and 0-10Vdc.
An optional ATEX certified version of this product is available approved for explosion protection for flammable gases (zone 0), dusts (zone 20) and mining areas (group I M1).
SILICON-ON-SAPPHIRE SENSOR TECHNOLOGY
PRESSURE RANGES 0-500mbar TO 0-1500bar
VOLTAGE OUTPUT
ACCURACY 0.1% NLHR
OPTIONAL ATEX APPROVED VERSION
ALL TITANIUM ALLOY WETTED PARTS
HIGH SPECIFICATION
The HISPEC HI2000 series of pressure transducers with state-of-the-art Silicon-on-Sapphire sensor technology offer levels of accuracy and performance previously unobtainable or prohibitively expensive.
The unique Silicon-on-Sapphire sensor technology provides outstanding performance and gives excellent stability over a wide temperature range. The advanced sensor design consists of a piezoresistive silicon strain gauge circuit, which is epitaxially grown onto the surface of a sapphire diaphragm to form a single crystalline structure. The sapphire sensor element is then molecularly bonded to a Titanium alloy sub-diaphragm. This enables the sensor to endure higher over- pressures and provides superb corrosion resistance. The completed sensor exhibits virtually no hysteresis and excellent long-term stability. With outstanding insulation properties, the sapphire substrate allows the sensor to operate over a very wide temperature range without loss of performance.
Applications include aerospace, laboratory and test, oil and gas monitoring equipment (down-hole) and subsea. Available in pressure ranges from 0-500mbar to 0-1500bar and with electrical outputs of 10mV/V, 0-5Vdc and 0-10Vdc.
An optional ATEX certified version of this product is available approved for explosion protection for flammable gases (zone 0), dusts (zone 20) and mining areas (group I M1).
