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Field effect transistor (FET) Eudyna Devices

Features * High Output Power: P1dB = 39.5dBm (Typ.) * High Gain: G1dB = 6.0dB (Typ) * High PAE: ηadd = 30% (Typ.) * Broad Band: 13.75 to 14.5GHz * Impedance Matched Zin/Zout = 50Ω * Hermetically Sealed Package

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Field effect transistor (FET) Eudyna Devices

Eudyna Devices

FUJITSU