The MBC13917 is a cost-effective, high isolation amplifier fabricated with an advanced RF BiCMOS process using the SiGe:C module. This is the leadless package version of the MBC13916 device. This device is designed for a wide range of general purpose RF applications, yet has excellent high frequency gain and noise figure. On-chip bias circuitry sets the bias point while matching is accomplished off-chip, affording the maximum in application flexibility.
