Ferroelectric memory, FRAM (Ferroelectric RAM) is a non-volatile memory offering high-speed writing, low power consumption and long rewriting endurance. It reduces the burden of OEM development because there is no need to differentiate between RAM and ROM. Furthermore, because no batteries are needed, the use of FRAM has benefits for manufacturing, maintenance and the environment. Fujitsu FRAM products include LSI devices for standalone memory smart cards and RFID. We also respond flexibly to customer requirements by creating custom LSI.
Fujitsu has delivered more than 300 million FRAM devices. We lead the world in developing and manufacturing FRAM.
