Static random access memory (SRAM) Hynix

The HY64SD16162B is a 16Mbit 1T/1C SRAM featured by high-speed operation and super low power consumption.The HY64SD16162B adopts one transistor memory cell and is organized as 1,048,576 words by 16bits.
The HY64SD16162B operates in the extended range of temperature and supports a wide operating voltage range.The HY64SD16162B also supports the deep power down mode for a super low standby current.
The HY64SD16162B delivers the high-density low power SRAM capability to the high-speed low power system.

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