MOSFET gate driver Infineon Technologies Sensors

We offer a new family of EiceDRIVER ™ IGBT / MOSFET gate driver ICs for applications from 600V up to 1200V blocking voltages. Based on innovative technologies including thin-film Silicon-On-Insulator technology (600V) and Coreless Transformer Technology (1200V), higher reliability, lower losses and better performance can be achieved.

Coreless Transformer Technology (CLT) allows the integration of a pulse transformer into an IC, combining the advantages of HVIC technology with the capability of a magnetic coupler. This results in an extremely rugged IC with high insulation capability. CLT allows faster switching speeds with no performance degradation compared to optocouplers, therefore providing constant reliability over the projected lifetime.

Thin-Film Silicon On Insulator (SOI) technology is an advanced technique for MOS/CMOS fabrications. It differs from the conventional bulk process by placing the active transistor layer on the top of an insulator. This leads to outstanding robustness against latch-up when exposed to extreme temperature and voltage conditions.

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