Schottky diode Infineon Technologies Sensors

Silicon Carbide Schottky Diodes - NEW 3G now available!

Silicon Carbide (SiC) is a revolutionary material for power semiconductors, its physical properties outperform Si- and GaN power devices by far.

Features

* Benchmark switching behavior
* No reverse recovery
* No temperature influence on the switching behavior
* Standard operating temperature -55° to 175°C


SiC power devices enable increased efficiency, reduced solution size, higher switching frequency and produce significant less electromagnetic interference (EMI) ina variety of target applications:


* Power factor correction
* Solar and UPS inverters
* Motor drives
* Output rectification

Infineon offers SiC Schottky diodes in 300V, 600V and 1200V.

More specifications...