Schottky diode
Infineon Technologies - Sensors
Silicon Carbide (SiC) is a revolutionary material for power semiconductors, its physical properties outperform Si- and GaN power devices by far.
Features
* Benchmark switching behavior
* No reverse recovery
* No temperature influence on the switching behavior
* Standard operating temperature -55° to 175°C
SiC power devices enable increased efficiency, reduced solution size, higher switching frequency and produce significant less electromagnetic interference (EMI) ina variety of target applications:
* Power factor correction
* Solar and UPS inverters
* Motor drives
* Output rectification
Infineon offers SiC Schottky diodes in 300V, 600V and 1200V.
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