Asynchronous SRAM memory
Integrated Silicon Solution
8192-word by 8-bit static RAM. It is fabricated using ISSI's
high-performance CMOS technology. This highly reliable
process coupled with innovative circuit design techniques,
yields access times as fast as 10 ns with low power
consumption.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 150 μW (typical) with CMOS input levels.
Easy memory expansion is provided by using one Chip
Enable input, CE. The active LOW Write Enable (WE)
controls both writing and reading of the memory.
The IS61C64AL is packaged in the JEDEC standard 28-
pin, 300-mil SOJ, and TSOP.
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