Programmable read-only memory (PROM)
Integrated Silicon Solution
EEPROM. It is fabricated using an enhanced
CMOS design and process. The IS93C46D
contains power-efficient read/write memory, and
organization of 128 bytes of 8 bits or 64 words of
16 bits. When the ORG pin is connected to Vcc
or left unconnected, x16 is selected; when it is
connected to ground, x8 is selected.
An instruction set defines the operation of the
devices, including read, write, and mode-enable
functions. To protect against inadvertent data
modification, all erase and write instructions are
accepted only while the device is write-enabled. A
selected x8 byte or x16 word can be modified with
a single WRITE or ERASE instruction.
Additionally, the two instructions WRITE ALL or
ERASE ALL can program the entire array. Once
a device begins its self-timed program procedure,
the data out pin (Dout) can indicate the READY/
BUSY status by raising chip select (CS). The selftimed
write cycle includes an automatic erasebefore-
write capability. The device can output any
number of consecutive bytes/words using a single
READ instruction.
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