IGBT transistor module
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Characteristics
- Type
- IGBT
Description
Features:
Features:
Easy paralleling due to the positive temperature coefficient of the on-state voltage
Rugged XPT design (Xtreme light Punch Through) results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3 x Ic
Thin wafer technology combined with the SPT design results in a competitive low VCE(sat)
SONIC™ diode
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