IGBT module
IXYS
# Features: Easy paralleling due to the positive temperature coefficient of the on-state voltage
# Rugged XPT design (Xtreme light Punch Through) results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
# - square RBSOA @ 3 x Ic Thin wafer technology combined with the SPT design results in a competitive low VCE(sat)
# SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
