IGBT transistor power
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Characteristics
- Type
- IGBT
- Technology
- power
Description
Features:
Easy paralleling due to the positive temperature coefficient of the on-state voltage
Rugged eXtreme-light Punch Through (XPT™) design results in:
- short circuit rated for 10µs.
- very low gate charge
- low EMI
- square Reverse Bias Safe Operating Areas (RBSOA) up to breakdown voltages
Thin wafer technology combined with the SPT design results in a competitive low VCE(sat)
SONIC-FRD™ diode
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