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Oxidation oven RLA-3100annealingbellgas
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Characteristics
- Function
- oxidation, annealing
- Configuration
- bell
- Heat source
- gas
- Atmosphere
- vacuum
- Other characteristics
- continuous, for the electronics industry
- Maximum temperature
Max.: 1,200 °C
(2,192 °F)Min.: 400 °C
(752 °F)- Width
900 mm
(35.43 in)- Height
2,580 mm
(101.57 in)- Depth
1,850 mm
(72.83 in)
Description
This system for 4- to 8-inch wafers performs activation and oxidation in a vacuum (LP) environment and N2 load-lock atmosphere. The upper and lower cross lamps (halogen) and a soaking system are used for higher in-plane temperature distribution uniformity.
Features
Upper & lower cross lamp structure and heat uniformizing unit improve the uniformity of in-plane temperature
4- to 8-inch wafer size is available
Multi-axis clean robot enables high-speed and accurate wafer transfer
Max 50 wafers continuous processing is available
Equipped with an operator-friendly high performance control system
Vacuum designed quartz tube enables accurate gas substitution and process at vacuum pressure
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*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.