Carbonitriding furnace
quenchingsinteringannealing

carbonitriding furnace
carbonitriding furnace
carbonitriding furnace
carbonitriding furnace
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Characteristics

Function
carbonitriding, quenching, sintering, annealing, heat treatment, crystal growth, brazing
Configuration
chamber
Heat source
electric
Atmosphere
hydrogen, inert gas, vacuum
Other characteristics
for the ceramics industry, laboratory, for metallurgy, for ingots, for billets
Maximum temperature

Max.: 2,000 °C
(3,632 °F)

Min.: 0 °C
(32 °F)

Description

This Crystal Growing Furnace allows lab-sized crystals to be produced with the Bridgman ,Czochralski or Stepanov method. This technique is used to grow single crystals of semiconductor materials (silicon, germanium and gallium arsenide), metals, salts and synthetic gemstones. The pulling speed is adjustable and controls accurately as low as 0.001”/min. (0.025mm/min). A separate motor is provided to rotate the 3/8” seed rod. Our crystal growing option can also be fitted on select front loading MRF furnaces using the top chamber port, such as our Multi-application Laboratory Furnace or select Arc Melting Furnaces.

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