Laser diode NEC Electronics
1310 nm

NX5330SA
1 310 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS
2008
DESCRIPTION
The NX5330SA is a 1 310 nm Multiple Quantum Well (MQW) structured
Fabry-Perot (FP) laser diode. This device is specified to operate under
pulsed condition and designed for light source of Optical Time Domain
Reflectometer (OTDR).
FEATURES
- High output power PO = 350 mW @ IFP = 1 000 mA*1
- Long wavelength %u03BBC = 1 310 nm
*1 Pulse Conditions: Pulse width (PW) = 10 µs, Duty = 1%

More specifications...