Secondary ion mass spectrometer (SIMS) Physical Electronics Inc

Long accepted as a tool for depth profiling thin films and insulating materials, Quadrupole Dynamic SIMS (D-SIMS) has become the surface analysis method of choice for characterizing ultra shallow implants used in semiconductor devices. Shrinking device geometries require ultra-shallow, high dose implantation of intentional dopants such as boron and arsenic and the use of thinner, highly controlled insulating layers (oxides and oxynitrides). These critical processes of modern semiconductor device fabrication are ideally suited to the analytical performance of Physical Electronics' ADEPT-1010 surface analysis instrument.

The ADEPT-1010 dynamic SIMS analysis instrument employs a unique secondary ion extraction system which provides high transmission with a quadrupole dynamic SIMS platform. High transmission yields low detection limits offering routine analyses of implant junction depth and dose. These critical factors in implantation can be measured with reproducibility of a few percent, consistent with the needs of the semiconductor industry. In addition, the ADEPT-1010 surface analysis instrument can be used to monitor the nitrogen content of nitrided oxides with thickness of 5nm and less.

The ultra-high vacuum environment of the ADEPT-1010 allows for depth profiling of low levels of oxygen and carbon in SiGe layers while maintaining excellent depth resolution and low sputter rates. This capability is important to the integrity of these high speed SiGe devices.

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