Sublimation furnace baSiC-T

crystal growthbellgas

The PVA TePla physical vapor transport (pvt) system baSiC-T has been especially designed for Silicon Carbide (SiC) crystal growth by sublimation of a source powder at high temperatures. The baSiC-T system design is based on a modular concept and allows the use of substrates (seeds) up to 6´´ diameter. New Generation SiC PVT Crystal Growth Furnace Designed for Power Electronic Applications high automation level for massproduction Fab Management Software Solution available small footprint, compact placement Available for 4´´ and 6´´ Inductive heating using field-proven coil-designs Low power consumption (approx. 10KW @ 2,200 °C stable control) Mobile loading/unloading concept for hot zone Superior Control System with intuitive operation at a high level of automation process visualisation with enhanced trending features offline recipe setup solution with lots of recipe options by sets of parameter long term process data logging, long term data retrieval control system and visulisation works independently (safety concept) system control loops configurable by sets of parameter Excellent Safety Concept CE conformity different level of system safety components ensures safe operation quality measurements and extended quality documentation Close cooperation with customers, institutes and component suppliers