Electron beam gun for surface analysis applications
2 kV | IG2 RBD Instruments Inc

PHI Compatible: The RBD 04-165 Ion Source is interchangeable with the PHI 04-161 and 04-162 ion guns. The RBD 32-165 Ion Source Control is interchangeable with the PHI 20-045 control. As a result, the RBD Model 04-165 works with the PHI 20-045, and the PHI 04-161 and 04-162 ion guns work with the RBD Model 32-165.

Theory: The Model 04-165 Backfill Ion Source generates an energetic inert gas ion beam for sputter-etching solid surfaces. The source requires a static pressure of 5x10-5 torr with an inert gas such as argon (see datasheet for list of compatible gasses). Ions are generated by electron impact within the ion source's dual filament ionization chamber and are then focused at the target with energies of up to 2 kV. The impurity content of the ion beam is minimized by using an off-axis filament geometry. A focusing lens permits high ion current density to be obtained for a given operating pressure and source-to-sample distance. A dual tungsten filament assembly permits continued operation when the first filament opens. The expected lifetime of the filament assembly is several years under normal usage at the recommended operating conditions. The filament assembly is easily replaced in the field.

The Model 32-165 2 kV Ion Source Control provides all the necessary voltages and currents required to operate the Model 04-165 2 kV Backfill Ion Source. The beam voltage may be activated manually, remotely, or with the built-in timer. Additionally, the anode (ion) and filament currents, as well as the beam and focus voltages, may be externally monitored to ensure accurate reproduction of sputtering conditions.