10th Generation Power MOS FETs from Renesas deliver lower gate charge loss and lower conduction loss, which means less heat generation and higher efficiency of energy use. 10th Generation Power MOS FETs with on-chip Schottky Barrier Diode (SBD) are also available both in single and dual format.
The new DrMOS, a driver IC and two MOS FETs incorporated in a single 56-pin QFN package, is a great space saver with large current capability and high power efficiency.
To learn more about the latest development of Renesas Power MOS FETs, click here.
