GaAs Schottky diode
TSC-S-01020
Rockwell Scientific
♦ Junction capacitance as low as 1fF allowing cutoff frequency >2THz
♦ Very low parasitic capacitance < 9fF
♦ Ultra low series resistance
♦ Airbridged anode contact for low parasitic operation
♦ Fully passivated by SiN
♦ Flip chip and beamlead geometry
♦ Anode metalization optimized for reliable optimization
♦ MMIC backend process available for integrated passives and vias
♦ Unique gold stand-off platforms for ruggedness in flip-chip applications
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