full SiC power module
BSM300D12P2E001 ROHM Semiconductor

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full SiC power module full SiC power module - BSM300D12P2E001


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    full SiC


In addition to 120A and 180A full SiC power modules, ROHM now offers a 300A type (BSM300D12P2E001) that enables support for larger power applications such as high capacity power supplies industrial equipment.
Moreover, significantly reduced switching loss (compared with conventional Si IGBT modules) makes high-frequency operation possible, ensuring compatibility with smaller peripheral components and cooling systems.

- Drain-source Voltage[V] :1200
- Drain Current[A]: 300.0
- Total Power Dissipation[W] :1875
- Junction Temperature(Max.)[°C] :175
- Storage Temperature (Min.)[°C] :-40
- Storage Temperature (Max.)[°C] :125