bipolar transistor / small-signal / silicon / hyperfrequency
2SA/B/C series ROHM Semiconductor

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Characteristics

  • Type:

    bipolar

  • Technology:

    small-signal

  • Other characteristics:

    silicon, hyperfrequency

  • Voltage:

    Max.: 400 V

    Min.: 0 V

  • Current:

    Max.: 6 mA

    Min.: 0 mA

Description

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
Features

Ultra-compact complex bipolar transistor for DC-DC converter