DDR3 SDRAM memory
Samsung Semiconductor
The 4Gb DDR3 SDRAM B-die is organized as a 128Mbit x 4 I/Os x 8banks
or 64Mbit x 8 I/Os x 8banks device. This synchronous device achieves high
speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3-
1866) for general applications.
The chip is designed to comply with the following key DDR3 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration,
On Die Termination using ODT pin and Asynchronous Reset .
or 64Mbit x 8 I/Os x 8banks device. This synchronous device achieves high
speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3-
1866) for general applications.
The chip is designed to comply with the following key DDR3 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration,
On Die Termination using ODT pin and Asynchronous Reset .
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