infrared LED / round / threaded / low-power
0.001 W, 0.006 W
LEDs are fabricated from III-V heterostructures grown onto InAs substrates. Optical immersion of lens with flip-chip devices enables three to five fold increase of output power.
Low power consumptions (µW to mW range)
Angle of emittance <40°
Switching time: 10 ns (typical), 20 ns (max)
Narrow bandwidth: FWHM = 0.1 to 0.2 λmax
Wide operating temperature range