CVD deposition machine / thin-film
ICPCVD SI 500 D
The SI 500 D plasma deposition tool represents the leading edge for plasma enhanced chemical vapor deposition of dielectric films, a-Si, SiC, and other materials. It is based on PTSA plasma source, separated gas inlets for reaction gasses, dynamic temperature controlled substrate electrode, fully controlled vacuum system, advanced SENTECH control software using remote field bus technology, and a very user friendly general user interface for operating the SI 500 D.
A large variety of substrates from wafers up to 200 mm diameter to parts loaded on carriers can be processed in the SI 500 D plasma deposition system. The single wafer vacuum loadlock guarantees stable process conditions and allows for easy switching between processes.
The SI 500 D plasma enhanced deposition tool is configured to deposit SiO2, SiNx, SiONx, and a-Si films in a temperature range from room temperature up to 350 °C. Solutions are available for the deposition of TEOS, SiC, and other materials with liquid or gaseous precursors. The SI 500 D is especially suited for the deposition of high efficient protection barriers on organic materials at low temperatures and damage free deposition of passivating films at well defined temperatures.