InGaAs photodiode XSJ-10-APD5-40S-X

avalanchePIN

Description The 10Gbps APD optical detector chip is GSG electrode structure, for the front into the light of high-speed avalanche light detector chip, the photosensitive area size is 40um, the main characteristics of the product are high multiplier, low capacitance, high bandwidth, low temperature coefficient and high reliability, mainly used in 10G SONET/SDH and 10G PON optical receiver. Features 1. Φ40μm active area. 2. High multiplication. 3. Low temperature coefficient. 4. 100% testing and inspection. 5. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. 6. RoHS2.0 (2011/65/EU) compliant. Applications 1. 10G EPON. 2. XGS Comb PON.