MOSFET transistor / switching
In ST's quest for expansion of wide bandgap transistors with silicon carbide comes the SiC MOSFETs that is considered to be the first among a variety of high-competent products.
SiC MOSFETs leads the industry with the highest temperature rating measuring at 200°C. Compared to the best-in-class IGBTs, it has exceptional switching performance regardless of temperature range. It has very low RDS area values even at cold environments unlike the silicon super junction MOSFETs. As a result of the simpler thermal design that reduced cooling requirements and trimming down inactive components, these devices are also competent in terms of BOM cost-effectiveness.