relative pressure transmitter / piezoresistive / strain gauge / silicon
HI2200, 2300 series
Suco VSE France
silicon, strain gauge, piezoresistive
precision, temperature-compensated, high-temperature, titanium
Max.: 200 °C (392 °F)
Min.: 0 °C (32 °F)
Max.: 1,500 bar (21,755.66 psi)
Min.: 0 bar (0 psi)
High operating and ambient temperatures of up to 200°C
Pressure ranges to 1,500 bar
Temperature compensated option
Good chemical compatibility for a range of applications
A range of electrical and process connections available
HISPEC - HI2200/2300 series of high temperature pressure transducers with state-of-the-art Silicon-on-Sapphire sensor technology offer levels of accuracy and performance previously unobtainable or prohibitively expensive. It is capable of operating at a constant 200 °C both media and ambient.
The advanced sensor design consists of a piezoresistive silicon strain gauge circuit, which is epitaxially grown onto the surface of a sapphire diaphragm to form a single crystalline structure. The sapphire sensor element is then molecularly bonded to a titanium alloy sub-diaphragm. This enables the sensor to endure higher over- pressures and provides superb corrosion resistance. The sensor exhibits virtually no hysteresis and excellent long-term stability. With outstanding insulation properties, the sapphire substrate protects the strain gauge circuit and allows the sensor to operate over a very wide temperature range without loss of performance.