Field effect transistor (FET)
Toshiba America Electronics Components
MICROWAVE POWER GaAs FET
TIM3742-12UL
FEATURES
-HIGH POWER
P1dB=41.5dBm at 3.7GHz to 4.2GHz
- HIGH GAIN
G1dB=11.5dB at 4.4GHz to 5.0GHz
- BROAD BAND INTERNALLY MATCHED FET
- HERMETICALLY SEALED PACKAGE
TIM3742-12UL
FEATURES
-HIGH POWER
P1dB=41.5dBm at 3.7GHz to 4.2GHz
- HIGH GAIN
G1dB=11.5dB at 4.4GHz to 5.0GHz
- BROAD BAND INTERNALLY MATCHED FET
- HERMETICALLY SEALED PACKAGE
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