HEMT transistor
Toshiba America Electronics Components
TGI1314-50L
FEATURES
- HIGH POWER
Pout=47.0dBm at Pin=42.0dBm
- HIGH GAIN
GL=8.0dB at 13.75GHz to 14.5GHz
- BROAD BAND INTERNALLY MATCHED HEMT
HERMETICALLY SEALED PACKAGE
- LOW INTERMODULATION DISTORTION
IM3(Min.)=−25dBc at Po=40.0dBm
Single Carrier Level
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