RF amplifier HMC8412 series

microwavepowervoltage

Low noise figure: 1.4 dB typical Single positive supply (self biased) High gain: ≤15.5 dB typical High OIP3: ≤33 dBm typical RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP HMC8412TCPZ-EP Supports defense and aerospace applications (AQEC standard) Download the HMC8412TCPZ-EP data sheet (pdf) Military temperature range (−55°C to +125°C) Controlled manufacturing baseline 1 assembly/test site 1 fabrication site Product change notification Qualification data available on request V62/21602 DSCC Drawing Number The HMC8412 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.4 GHz to 11 GHz. The HMC8412 provides a typical gain of 15.5 dB, a 1.4 dB typical noise figure, and a typical output third-order intercept (OIP3) of ≤33 dBm, requiring only 60 mA from a 5 V drain supply voltage. The saturated output power (PSAT) of ≤20.5 dBm typical enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many Analog Devices, Inc., balanced, inphase and quadrature (I/Q) or image rejection mixers. The HMC8412 also features inputs and outputs that are internally matched to 50 Ω, making the device ideal for surface-mount technology (SMT)-based, high capacity microwave radio applications. The HMC8412 is housed in an RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP. Test instrumentation Telecommunications Military radar and communication Electronic warfare Aerospace