Power amplifier ADPA1113
voltageinstrumentation

power amplifier
power amplifier
power amplifier
power amplifier
power amplifier
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Characteristics

Type
power, voltage
Secondary function
instrumentation
Voltage

28 V

Current

750 mA

Frequency

Max.: 7 GHz

Min.: 2 GHz

Description

Internally matched and AC-coupled, 40 W, GaN power amplifier Integrated drain bias inductor Small signal gain: 40.5 dB typical Power gain: 25.5 dB typical (PIN = 21 dBm) PAE: 39% typical 14-lead ceramic leaded chip carrier [LDCC] with a copper-molybdenum base Additional Details The ADPA1113 is a gallium nitride (GaN), broadband power amplifier delivering 46.5 dBm (44.7 W) with 39.0% power added efficiency (PAE) from 2.3 GHz to 5.7 GHz. No external matching or AC-coupling are required to achieve full-band operation. Additionally, no external inductor is required to bias the amplifier The ADPA1113 is ideal for continuous wave applications, such as military jammers and radars APPLICATIONS Military jammers Commercial and military radars Test and measurement equipment The ADPA1113-EVALZ is a 2-layer printed circuit board (PCB) fabricated from 10 mil thick Rogers 4350B copper clad mounted to an aluminum heat spreader. The heat spreader provides thermal relief to the ADPA1113 and mechanical support to the PCB. Mounting holes on the heat spreader allow it to be attached to larger heatsinks for improved thermal management. The RFIN and RFOUT ports are populated by 2.92 mm female coaxial connectors, and their respective RF traces are of 50 Ω characteristic impedance. The ADPA1113-EVALZ is populated with components suitable for use over the entire operating temperature range of the ADPA1113 The RF traces are 50 Ω grounded coplanar waveguides, and the package ground leads connect directly to the ground plane

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