True Wafer Surface Temperature and Reflectance Measurement for GaN-based Epitaxy, 650 to 1300°C
Advanced Energy's UV 400 and UVR 400 pyrometers directly measure wafer surface temperature instead of the traditional susceptor/pocket temperature.
•Wide temperature range (650 to 1300°C) allows coverage of both main buffer growth and MQW growth
•Measure deposition thickness with the additional reflectometer at 635 nm on the UVR 400
•Adjustable emissivity, transmittance, and subrange
Advanced Energy's UV 400 and UVR 400 pyrometers directly measure wafer surface temperature. This improved method allows more accurate control of the wafer temperature leading to improved yield.
The UVR 400 includes an additional reflectometer at 635 nm with 0.5 kHz measurement speed. This enables you to enable measure deposition thickness.
These systems set a new standard for LED production processes. Results show a reliable correlation between process temperature and final product wavelength.
•Improve yield via accurate true wafer temperature measurement
•Measure temperature directly on the GaN layer using UV wavelength instrumentation
•Capture real-time reflectance measurement using a fast pulsing light source
•Prevent residue temperature oscillation as seen in NIR emissivity-compensated pyrometers
•Prevent data skew due to delayed sampling (no shutter on and off)
•Reliable wafer temperature with PL wavelength correlation
•Analog output and RS485 with UPP protocol interfaces available
•Adjustable subrange within the temperature range
•Device withstands an atmosphere of nitrogen and a vacuum (< 10 mbar)