Mass spectrometer IMS Wf & SC Ultra

IMSprocessfor the semiconductor industry

SIMS for Advanced Semiconductor Applications The IMS Wf and SC Ultra have been specifically designed to meet the increasing needs for dynamic SIMS measurements in advanced semiconductors. Offering a large range of impact energies (100 eV to 10 keV) with no compromise on mass resolution and primary beam density, they ensure unequalled analytical performance at high throughput for the most challenging applications: extra shallow & high energy implants, ultra-thin nitride oxides, high-k metal gates, SiGe doped layers, Si:C:P structures, PV & LED devices, graphene, etc... From standard to ultra-shallow depth profiling A first requisite to the analysis of advanced semiconductors is the optimization of SIMS analytical conditions for ultra-shallow depth profiling without giving up standard depth profiling applications. CAMECA has therefore developed a unique SIMS instrument design capable of sputtering samples with a large range of impact energies: from high energy (keV range) for thick structures to Ultra-Low Energy (≤ 150eV) for ultra-thin structures. This flexibility in the impact energy choice is available for different well-controlled sputtering conditions (species, incidence angle, etc...). The CAMECA IMS Wf and SC Ultra are the only SIMS instrument offering such EXtreme Low Impact Energy (EXLIE) capabilities with no compromise on high mass resolution and high transmission.